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EMP37N03H Datasheet

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Excelliance MOS · EMP37N03H File Size : 269.54KB · 5 hits

Features and Benefits

5/8 UNIT V A mJ W °C UNIT °C / W p.1 350°C / W when mounted on a 1 in2 pad of 2 oz copper. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMP37N03H LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐.

EMP37N03H EMP37N03H EMP37N03H
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N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
EMP37N03H
EMP310
EMP311
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